Introduction to Modeling and Simulation of Semiconductor Devices
陳仁純教授 ( 高師大數學系) 上午 9:30–10:30 鴻經館 107 室Mathematical models and numerical methods for simulating computer devices fabricated by semiconductor materials will be given. The models are based on both classical and quantum mechanics ranging from drift-diffusion, energy-transport to density-gradient equations. Numerical methods include adaptive finite element, monotone iterative and exponential-fitting methods. Simulation results of MOSFET (metal-oxide-semiconductor field-effect transistor) with gate length of 34nm will be presented.